Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology-Part I: Process Development and Characterization

• Published in: Journal of microelectromechanical systems Vol. 20; no. 3; pp. 720 - 729
• Main Authors: Nabki, F, Dusatko, T A, Vengallatore, S, El-Gamal, M N
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous materials; Applied sciences; CMOS integrated circuits; Complementary metal-oxide-semiconductor (CMOS) compatible; Cross-disciplinary physics: materials science; rheology; Deposition; direct current (dc) sputtering; Electronics; Etching; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; low temperature; Materials science; Mechanical instruments, equipment and techniques; Methods of deposition of films and coatings; film growth and epitaxy; Micro- and nanoelectromechanical devices (mems/nems); Microelectromechanical systems; microelectromechanical systems (MEMS); Microelectronic fabrication (materials and surfaces technology); Micromechanical devices and systems; Physics; Plasma temperature; Polyimides; Residual stresses; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; silicon carbide (SiC); Spray coating techniques; Sputtering; Stemming; stress control; Stresses; surface micromachining; Surface treatment; Amorphous material; microelectromechanical systems (MEMS); Stress control; Deposition rate; Complementary metal-oxide-semiconductor (CMOS) compatible; Amorphous state; silicon carbide (SiC); Deposition process; Silicon carbide; Direct current; Complementary MOS technology; Surface micromachining; Cathodic sputtering; Compatibility; Strain control; Microelectromechanical device; Low temperature; Production process; direct current (dc) sputtering
• ISSN: 1057-7157; 1941-0158
• DOI: 10.1109/JMEMS.2011.2111355

A low-temperature (<; 300 °C) low-stress microelectromechanical systems fabrication process based on a silicon carbide structural layer is presented. A partially conductive sintered target enables low-temperature dc sputtering of amorphous silicon carbide (SiC) at high deposition rates (75 nm/min). The low stress of the structural film allows for mechanically reliable structures to be fabricated, while the low-temperature deposition allows for pre-SiC metallization. The process is designed for low-cost film deposition and for complementary metal-oxide-semiconductor postintegration, stemming from chemical and thermal compatibility. Process flow, deposition, etching, and stress control are discussed, and a detailed process characterization is reported.