Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

• Published in: IEEE photonics journal Vol. 14; no. 6; pp. 1 - 6
• Main Authors: Zhao, Yuliang, Yang, Guowen, Zhao, Yongming, Tang, Song, Lan, Yu, Liu, Yuxian, Wang, Zhenfu, Demir, Abdullah
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.12.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Diodes; Doping; Epitaxial growth; Epitaxial stacking; Epitaxy; high efficiency; High power lasers; laser diode; low optical loss; n-doping concentration; Optical device fabrication; Optical losses; Optical refraction; power scaling; Resistance; Semiconductor lasers; specific resistance; Stacking; tunnel junction; Tunnel junctions
• ISSN: 1943-0655; 1943-0647
• DOI: 10.1109/JPHOT.2022.3211964

We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments to realize a high peak current density of 7.7 × 10 4 A/cm 2 and a low specific resistance of 1.5 × 10 −5 Ωcm 2 with a high n-doping concentration of 6 × 10 19 cm −3 . Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triple-cavity laser diodes have a low optical loss (0.42 cm −1 ) and generate a peak power of 83 W with a short cavity length of 750 μm at a limited current of 30 A.