Impurities evaporation from metallurgical-grade silicon in electron beam melting process

• Published in: Rare metals Vol. 30; no. 3; pp. 274 - 277
• Main Authors: Wang, Qiang, Dong, Wei, Tan, Yi, Jiang, Dachuan, Zhang, Cong, Peng, Xu
• Format: Journal Article
• Language: English
• Published: Springer Berlin Heidelberg Nonferrous Metals Society of China 01.06.2011; Springer Nature B.V; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
• Subjects: Aluminum; Biomaterials; Chemistry and Materials Science; Computational efficiency; Computing time; Electron beam melting; Energy; Impurities; Langmuir方程; Magnesium; Materials Engineering; Materials Science; Mathematical analysis; Metallic Materials; Nanoscale Science and Technology; Physical Chemistry; Silicon; 冶金级; 去除效率; 杂质元素; 熔炼过程; 电子束熔炼; 硅; 蒸发; removal efficiency; silicon; evaporation; impurities; electron beam melting
• ISSN: 1001-0521; 1867-7185
• DOI: 10.1007/s12598-011-0382-6

The purification of metallurgical-grade silicon （MG-Si） has been investigated during electron beam melting （EBM） process. The results show that the phosphorus, calcium and aluminum contents decrease significantly after melting, and magnesium is partially removed. However, no significant change in content for boron and iron has been found. Langmuir＇s equation and Henry law were used to derive the removal effi-ciency for each impurity element. The free surface temperature was estimated by the Hertz-Knudsen-Langmuir equation and silicon＇s vapor pressure equation. Good agreement was found between measured and calculated impurities＇ removal efficiency for phosphorus, calcium and aluminum, magnesium, boron and iron. The deviation between the two results was also analyzed in depth.