Influence of growth temperatures on the properties of photoactive CZTS thin films using a spray pyrolysis technique

Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in toxic atmosphere. The influence of substrate temperatures on the physico-chemical properties of the CZTS films is investigated. The film spr...

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Published inMaterials letters Vol. 129; pp. 153 - 155
Main Authors Bhosale, S.M., Suryawanshi, M.P., Gaikwad, M.A., Bhosale, P.N., Kim, J.H., Moholkar, A.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.08.2014
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Abstract Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in toxic atmosphere. The influence of substrate temperatures on the physico-chemical properties of the CZTS films is investigated. The film sprayed at optimized substrate temperature exhibits optical band gap energy of 1.49eV, which is prerequisite for the photovoltaic applications. The photoelectrochemical (PEC) device of CZTS-500 film showed a power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far. •Synthesis of highly crystalline phase-pure CZTS thin films using a CSP technique without sulfurization treatment in toxic atmosphere.•Influence of growth temperatures on the properties of CZTS thin films.•Bandgap tunnelling is observed as a function of substrate temperature.•Power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far.
AbstractList Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in toxic atmosphere. The influence of substrate temperatures on the physico-chemical properties of the CZTS films is investigated. The film sprayed at optimized substrate temperature exhibits optical band gap energy of 1.49eV, which is prerequisite for the photovoltaic applications. The photoelectrochemical (PEC) device of CZTS-500 film showed a power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far. •Synthesis of highly crystalline phase-pure CZTS thin films using a CSP technique without sulfurization treatment in toxic atmosphere.•Influence of growth temperatures on the properties of CZTS thin films.•Bandgap tunnelling is observed as a function of substrate temperature.•Power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far.
Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in toxic atmosphere. The influence of substrate temperatures on the physico-chemical properties of the CZTS films is investigated. The film sprayed at optimized substrate temperature exhibits optical band gap energy of 1.49eV, which is prerequisite for the photovoltaic applications. The photoelectrochemical (PEC) device of CZTS-500 film showed a power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far.
Author Gaikwad, M.A.
Suryawanshi, M.P.
Bhosale, S.M.
Bhosale, P.N.
Kim, J.H.
Moholkar, A.V.
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Keywords TFSCs
0.86% power conversion efficiency
Spray pyrolysis
Cu2ZnSnS4 (CZTS)
Influence of growth temperatures
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Snippet Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in...
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SubjectTerms 0.86% power conversion efficiency
Crystal structure
Cu2ZnSnS4 (CZTS)
CZT
Devices
Energy conversion efficiency
Energy gap
Influence of growth temperatures
Spray pyrolysis
Sulfurization
TFSCs
Thin films
Title Influence of growth temperatures on the properties of photoactive CZTS thin films using a spray pyrolysis technique
URI https://dx.doi.org/10.1016/j.matlet.2014.04.131
https://search.proquest.com/docview/1642230357
Volume 129
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