Influence of growth temperatures on the properties of photoactive CZTS thin films using a spray pyrolysis technique

• Published in: Materials letters Vol. 129; pp. 153 - 155
• Main Authors: Bhosale, S.M., Suryawanshi, M.P., Gaikwad, M.A., Bhosale, P.N., Kim, J.H., Moholkar, A.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.08.2014
• Subjects: 0.86% power conversion efficiency; Crystal structure; Cu2ZnSnS4 (CZTS); CZT; Devices; Energy conversion efficiency; Energy gap; Influence of growth temperatures; Spray pyrolysis; Sulfurization; TFSCs; Thin films; TFSCs; 0.86% power conversion efficiency; Spray pyrolysis; Cu2ZnSnS4 (CZTS); Influence of growth temperatures
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2014.04.131

Highly crystalline photoactive Cu2ZnSnS4 (CZTS) thin films are fabricated by a simple and low cost spray-pyrolysis technique without sulfurization treatment in toxic atmosphere. The influence of substrate temperatures on the physico-chemical properties of the CZTS films is investigated. The film sprayed at optimized substrate temperature exhibits optical band gap energy of 1.49eV, which is prerequisite for the photovoltaic applications. The photoelectrochemical (PEC) device of CZTS-500 film showed a power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far. •Synthesis of highly crystalline phase-pure CZTS thin films using a CSP technique without sulfurization treatment in toxic atmosphere.•Influence of growth temperatures on the properties of CZTS thin films.•Bandgap tunnelling is observed as a function of substrate temperature.•Power conversion efficiency of 0.86% which is the highest efficiency for sprayed CZTS thin films so far.