Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

•ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method.•RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement.•DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) t...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 598; pp. 120 - 125
Main Authors Debbichi, M., Souissi, M., Fouzri, A., Schmerber, G., Said, M., Alouani, M.
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier B.V 15.06.2014
Elsevier
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Summary:•ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method.•RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement.•DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate.
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ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2014.01.247