Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering
•ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method.•RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement.•DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) t...
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Published in | Journal of alloys and compounds Vol. 598; pp. 120 - 125 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Kidlington
Elsevier B.V
15.06.2014
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | •ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method.•RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement.•DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO.
Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2014.01.247 |