Photoluminescence from Si: Effect of ripple microstructures induced by argon ion irradiation

• Published in: Surface & coatings technology Vol. 203; no. 17; pp. 2690 - 2693
• Main Authors: Chini, T.K., Datta, D.P., Luchhesi, U., Mücklich, A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2009; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ion irradiation; Materials science; Photoluminescence; Physics; Ripple; Surface treatments; Ripple; Ion irradiation; Photoluminescence; Surface treatments; Microstructure
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2009.02.096

We performed photoluminescence (PL) measurements on Si surface irradiated with 60 keV Ar + at a fixed ion fluence of 10 18 ions/cm 2 for two angles of ion incidence, namely 0° (with respect to surface normal of the sample) and 60°. Periodically modulated ripple morphology is observed for a 60° angle of ion incidence. The ripple microstructure consists of amorphous structure on the rear slope and a comparatively thicker amorphous layer with Ar bubbles on the front slope, whereas a uniformly thick amorphous layer with relatively large bubbles is created under normal bombardment. Room temperature PL of the rippled Si shows a visible band with a peak at ~ 700 nm and a strong infrared (IR) band having a peak at ~ 1000 nm. However, the visible PL was very weak and no IR emission was observed for normally irradiated Si.