Fabrication of high aspect ratio nanocell lattices by ion beam irradiation

• Published in: Applied surface science Vol. 385; pp. 515 - 520
• Main Authors: Ishikawa, Osamu, Nitta, Noriko, Taniwaki, Masafumi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.11.2016
• Subjects: Focused ion beam; High aspect ratio; InSb; Ion beam irradiation; Ion beams; Ion flux; Irradiation; Lattices; Migration; Nanocell lattice; Nanostructure; Semiconductors; Voids; Ion flux; Ion beam irradiation; Nanocell lattice; InSb; Focused ion beam
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2016.05.156

[Display omitted] •Nanocell lattice with a high aspect ratio on InSb semiconductor surface was fabricated by ion beam irradiation.•The fabrication technique consisting of top-down and bottom-up processes was performed in FIB.•High aspect ratio of 2 was achieved in nanocell lattice with a 100nm interval.•The intermediate-flux irradiation is favorable for fabrication of nanocell with a high aspect ratio. A high aspect ratio nanocell lattice was fabricated on the InSb semiconductor surface using the migration of point defects induced by ion beam irradiation. The fabrication technique consisting of the top-down (formation of voids and holes) and bottom-up (growth of voids and holes into nanocells) processes was performed using a focused ion beam (FIB) system. A cell aspect ratio of 2 (cell height/cell diameter) was achieved for the nanocell lattice with a 100nm dot interval The intermediate-flux ion irradiation during the bottom-up process was found to be optimal for the fabrication of a high aspect ratio nanocell.