Fabrication of high aspect ratio nanocell lattices by ion beam irradiation
[Display omitted] •Nanocell lattice with a high aspect ratio on InSb semiconductor surface was fabricated by ion beam irradiation.•The fabrication technique consisting of top-down and bottom-up processes was performed in FIB.•High aspect ratio of 2 was achieved in nanocell lattice with a 100nm inter...
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Published in | Applied surface science Vol. 385; pp. 515 - 520 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.11.2016
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Subjects | |
Online Access | Get full text |
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Summary: | [Display omitted]
•Nanocell lattice with a high aspect ratio on InSb semiconductor surface was fabricated by ion beam irradiation.•The fabrication technique consisting of top-down and bottom-up processes was performed in FIB.•High aspect ratio of 2 was achieved in nanocell lattice with a 100nm interval.•The intermediate-flux irradiation is favorable for fabrication of nanocell with a high aspect ratio.
A high aspect ratio nanocell lattice was fabricated on the InSb semiconductor surface using the migration of point defects induced by ion beam irradiation. The fabrication technique consisting of the top-down (formation of voids and holes) and bottom-up (growth of voids and holes into nanocells) processes was performed using a focused ion beam (FIB) system. A cell aspect ratio of 2 (cell height/cell diameter) was achieved for the nanocell lattice with a 100nm dot interval The intermediate-flux ion irradiation during the bottom-up process was found to be optimal for the fabrication of a high aspect ratio nanocell. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2016.05.156 |