Design of Compact TE-Polarized Mode-Order Converter in Silicon Waveguide With High Refractive Index Material

We propose and numerically demonstrate a design of bidirectional transverse electric (TE) polarized mode-order converter based on silicon-on-insulator platform. This converter is realized by introducing high refractive index material inlaid in a silicon slab waveguide. Simulated by three-dimensional...

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Bibliographic Details
Published inIEEE photonics journal Vol. 10; no. 6; pp. 1 - 7
Main Authors Zhu, Danfeng, Ye, Han, Yu, Zhongyuan, Li, Jing, Yu, Fengyi, Liu, Yumin
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.12.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:We propose and numerically demonstrate a design of bidirectional transverse electric (TE) polarized mode-order converter based on silicon-on-insulator platform. This converter is realized by introducing high refractive index material inlaid in a silicon slab waveguide. Simulated by three-dimensional finite-difference method time-domain, the forward (TE0 to TE1-like conversion) transmittance reaches approximately 88.2%, while the backward value (TE1 to TE0-like conversion) is about 89.4% at the wavelength of 1550 nm. The footprint of this converter is as small as 0.95 × 1.5 μm 2 . Fabrication tolerance analysis demonstrates satisfactory robustness. Moreover, we present a polarization-independent converter with slightly modified geometry. The transmittance keeps above 87.2% within the wavelength range from 1500 nm to 1600 nm for both TE and transverse magnetic modes. These devices are expected to contribute to the on-chip mode division multiplexing.
ISSN:1943-0655
1943-0655
1943-0647
DOI:10.1109/JPHOT.2018.2883209