Design of Compact TE-Polarized Mode-Order Converter in Silicon Waveguide With High Refractive Index Material
We propose and numerically demonstrate a design of bidirectional transverse electric (TE) polarized mode-order converter based on silicon-on-insulator platform. This converter is realized by introducing high refractive index material inlaid in a silicon slab waveguide. Simulated by three-dimensional...
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Published in | IEEE photonics journal Vol. 10; no. 6; pp. 1 - 7 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.12.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We propose and numerically demonstrate a design of bidirectional transverse electric (TE) polarized mode-order converter based on silicon-on-insulator platform. This converter is realized by introducing high refractive index material inlaid in a silicon slab waveguide. Simulated by three-dimensional finite-difference method time-domain, the forward (TE0 to TE1-like conversion) transmittance reaches approximately 88.2%, while the backward value (TE1 to TE0-like conversion) is about 89.4% at the wavelength of 1550 nm. The footprint of this converter is as small as 0.95 × 1.5 μm 2 . Fabrication tolerance analysis demonstrates satisfactory robustness. Moreover, we present a polarization-independent converter with slightly modified geometry. The transmittance keeps above 87.2% within the wavelength range from 1500 nm to 1600 nm for both TE and transverse magnetic modes. These devices are expected to contribute to the on-chip mode division multiplexing. |
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ISSN: | 1943-0655 1943-0655 1943-0647 |
DOI: | 10.1109/JPHOT.2018.2883209 |