Structural properties of transparent Ti-V oxide semiconductor thin films

Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepa...

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Published inCentral European journal of physics Vol. 11; no. 2; pp. 251 - 257
Main Authors Sieradzka, Karolina, Kaczmarek, Danuta, Morgiel, Jerzy, Domaradzki, Jaroslaw, Prociow, Eugeniusz, Adamiak, Bogdan
Format Journal Article
LanguageEnglish
Published Heidelberg SP Versita 01.02.2013
Versita
De Gruyter
Subjects
Biological and Medical Physics
Biophysics
Environmental Physics
Geophysics/Geodesy
magnetron sputtering
oxide
Physical Chemistry
Physics
Physics and Astronomy
Research Article
structural investigation
titanium
transparent semiconductor
vanadium
transparent semiconductor
vanadium
magnetron sputtering
oxide
titanium
structural investigation
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Abstract Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO 2 -V 2 O 3 -V 2 O 5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO 2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 10 5 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
AbstractList Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO 2 -V 2 O 3 -V 2 O 5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO 2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 10 5 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
Abstract Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
Author Morgiel, Jerzy
Adamiak, Bogdan
Sieradzka, Karolina
Kaczmarek, Danuta
Domaradzki, Jaroslaw
Prociow, Eugeniusz
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Issue 2
Keywords transparent semiconductor
vanadium
magnetron sputtering
oxide
titanium
structural investigation
Language English
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Snippet Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural...
Abstract Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on...
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SubjectTerms Biological and Medical Physics
Biophysics
Environmental Physics
Geophysics/Geodesy
magnetron sputtering
oxide
Physical Chemistry
Physics
Physics and Astronomy
Research Article
structural investigation
titanium
transparent semiconductor
vanadium
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Title Structural properties of transparent Ti-V oxide semiconductor thin films
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