Structural properties of transparent Ti-V oxide semiconductor thin films

• Published in: Central European journal of physics Vol. 11; no. 2; pp. 251 - 257
• Main Authors: Sieradzka, Karolina, Kaczmarek, Danuta, Morgiel, Jerzy, Domaradzki, Jaroslaw, Prociow, Eugeniusz, Adamiak, Bogdan
• Format: Journal Article
• Language: English
• Published: Heidelberg SP Versita 01.02.2013; Versita; De Gruyter
• Subjects: Biological and Medical Physics; Biophysics; Environmental Physics; Geophysics/Geodesy; magnetron sputtering; oxide; Physical Chemistry; Physics; Physics and Astronomy; Research Article; structural investigation; titanium; transparent semiconductor; vanadium; transparent semiconductor; vanadium; magnetron sputtering; oxide; titanium; structural investigation
• ISSN: 1895-1082; 2391-5471; 1644-3608; 2391-5471
• DOI: 10.2478/s11534-012-0150-8

Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO 2 -V 2 O 3 -V 2 O 5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO 2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 10 5 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.