Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate

A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n/sup +/ and contact n/sup +/ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si b...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 46; no. 5; pp. 641 - 646
Main Authors Yunghong Wu, Armstrong, B.M., Gamble, H.S., Zhirun Hu, Qiang Chen, Suidong Yang, Fusco, V.F., Stewart, J.A.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1998
Subjects
Detectors
Fabrication
Ion implantation
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Platinum
Schottky diodes
Silicon
Substrates
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Summary:A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n/sup +/ and contact n/sup +/ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si barrier was formed by metallurgical interaction between pure platinum film and silicon. The process technology developed for the Schottky-detector diode fabrication is precise, simple, and cheap, and is suitable for mass production. The typical measured cutoff frequency of a zero-biased fabricated Schottky diode is 118 GHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/22.668676