Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

The influence of the Schottky contact is studied for hole transport material (HTM) free CH 3 NH 3 PbI 3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experi...

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Bibliographic Details
Published inEPJ Photovoltaics Vol. 8; p. 85501
Main Authors Huang, Y., Aharon, S., Rolland, A., Pedesseau, L., Durand, O., Etgar, L., Even, J.
Format Journal Article
LanguageEnglish
Published Les Ulis EDP Sciences 2017
EDP sciences
Subjects
Bias
Capacitance-voltage characteristics
Computer simulation
Conductors
Efficiency
Electric potential
Energy
Photovoltaic cells
Physics
Solar cells
Sun
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Summary:The influence of the Schottky contact is studied for hole transport material (HTM) free CH 3 NH 3 PbI 3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH 3 NH 3 PbI 3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH 3 NH 3 PbI 3 PSCs.
ISSN:2105-0716
2105-0716
DOI:10.1051/epjpv/2017001