Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states

Various surface-optical spectra can be described in terms of energy derivatives of the bulk dielectric function. The spectra unequivocally indicate that critical point energies obtained from optical data are not necessarily equal to bulk values and that surface chemical and structural terminations a...

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Bibliographic Details
Published inThin solid films Vol. 313; no. 1-2; pp. 557 - 560
Main Authors Mantese, L., Bell, K.A., Rossow, U., Aspnes, D.E.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.1998
Subjects
Localization
Wave packet
Localization
Wave packet
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Summary:Various surface-optical spectra can be described in terms of energy derivatives of the bulk dielectric function. The spectra unequivocally indicate that critical point energies obtained from optical data are not necessarily equal to bulk values and that surface chemical and structural terminations are at least contributing factors. We invoke localization and transition-lifetime arguments to describe these effects. Existing surface-optical calculations do not address these contributions, which may explain in part why discrepancies remain between theory and experiment.
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ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00883-3