Reduced self-heating by strained silicon substrate engineering

• Published in: Applied surface science Vol. 254; no. 19; pp. 6182 - 6185
• Main Authors: O’Neill, A., Agaiby, R., Olsen, S., Yang, Y., Hellstrom, P.-E., Ostling, M., Oehme, M., Lyutovich, K., Kasper, E., Eneman, G., Verheyen, P., Loo, R., Claeys, C., Fiegna, C., Sangiorgi, E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.07.2008; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrical engineering, electronics and photonics; Elektroteknik, elektronik och fotonik; Exact sciences and technology; MOSFET; Physics; Self heating; Strained silicon; TECHNOLOGY; TEKNIKVETENSKAP; MOSFET; Self heating; Strained silicon; Strained silicon,Self heating,MOSFET; Silicon; Strains

Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become necessary in order to maintain performance leverage of integrated circuits with continued scaling. The relevance of thermal effects in device design increases since the thermal conductivity of these new ma...