Issues concerning the preparation of ohmic contacts to n-GaN

Several processing parameters for Ti/Al ohmic contacts to n-GaN have been considered in this study. Ti/Al contacts are widely used as low resistance contacts in GaN-based electronic and photonic devices, but the processing issues of these contacts are not thoroughly understood to allow proper standa...

Full description

Saved in:
Bibliographic Details
Published inSolid-state electronics Vol. 45; no. 9; pp. 1597 - 1605
Main Authors Pelto, Christopher M., Austin Chang, Y., Chen, Yong, Stanley Williams, R.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2001
Subjects
Aluminum
Annealing
Electrical characteristics
GaN
NiAl
Ohmic contacts
Oxidation
Processing
Titanium
Transmission line model
Electrical characteristics
Annealing
NiAl
GaN
Aluminum
Titanium
Transmission line model
Oxidation
Ohmic contacts
Processing
Online AccessGet full text

Cover

More Information
Summary:Several processing parameters for Ti/Al ohmic contacts to n-GaN have been considered in this study. Ti/Al contacts are widely used as low resistance contacts in GaN-based electronic and photonic devices, but the processing issues of these contacts are not thoroughly understood to allow proper standardization. In this study, we have looked at the effects of different Ti:Al layer thickness ratios, oxidizing atmospheres, wet surface cleaning procedures, and deposition techniques on the Ti/Al contact structure's performance. A parallel processing study of Ti/Al contacts with more novel contacts is suggested as a means of controlling the many inherent variables that are shown to affect contact performance. We have used this parallel processing method to quantify the performance of a novel NiAl contact to n-GaN.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00163-0