Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

• Published in: IEEE electron device letters Vol. 39; no. 11; pp. 1656 - 1659
• Main Authors: Ni, Kai, Li, Xueqing, Smith, Jeffrey A., Jerry, Matthew, Datta, Suman
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Arrays; Computer architecture; Computer memory; FeFET; Ferroelectric materials; Ferroelectricity; HZO; Leakage current; Leakage currents; Logic gates; memory array; Microprocessors; Nonvolatile memory; Sensors; Switches; write disturb
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2018.2872347

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