Photoluminescence from thin porous films of silicon carbide

Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200–600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight...

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Bibliographic Details
Published inThin solid films Vol. 297; no. 1; pp. 229 - 232
Main Authors Parkhutik, V.P, Namavar, F, Andrade, E
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.1997
Subjects
Anodization
Photoluminescence
Silicon carbide
Anodization
Silicon carbide
Photoluminescence
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Summary:Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200–600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150–200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process. © 1997 Elsevier Science S.A.
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ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09422-9