Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor

• Published in: Microelectronic engineering Vol. 69; no. 2; pp. 480 - 484
• Main Authors: Mikoushkin, V.M., Mamutin, V.V., Sysoev, S.E., Shnitov, V.V., Gordeev, Yu.S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2003
• Subjects: Field effect; High temperature superconductor; Ion-induced restructuring; MIS-structure; Nanostrutures; MIS-structure; Nanostrutures; Field effect; Ion-induced restructuring; High temperature superconductor
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(03)00360-5

The paper suggests a new method of controllable fabrication of ‘Metal/Insulator/Superconductor’ (MIS) structures with nano- and subnanometer thicknesses of layers and interfaces. The method is based on ion-induced self-organizing restructuring near surface regions of high temperature superconductors (HTSC). At the first stage of the process, break of chemical metal–oxygen bonds stimulated by ion bombarding takes place. Then metal atoms diffuse towards the surface and form metallic segregate. The irradiated region loses its superconductivity and is turns into insulator. The dielectric layer thickness is determined by the ion penetration depth that can be regulated by varying the ion energies. The processes pointed out and properties of the structures created have been studied by using electron spectroscopy. As compared to the known structures, the discovered ones are characterized by fundamentally thinner layers and interfaces.