GMR versus interfacial roughness induced from different buffers in (Co/Cu) ML

• Published in: Journal of magnetism and magnetic materials Vol. 198; pp. 107 - 109
• Main Authors: El Harfaoui, M, Le Gall, H, Ben Youssef, J, Pogossian, S, Thiaville, A, Gogol, P, Qachaou, A, Desvignes, J.M
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.1999
• Subjects: Buffer layer; GMR; Interfacial roughness; Metallic multilayers; Texture; Buffer layer; Interfacial roughness; Metallic multilayers; Texture; GMR
• ISSN: 0304-8853
• DOI: 10.1016/S0304-8853(98)00639-8

The correlation between the giant magnetoresistance Δ R/ R, at the first maximum of the oscillating thickness dependence of the magnetoresistance (MR), and the structural and magnetic parameters has been investigated in (Co/Cu) multilayers (ML) deposited by the unusual RF sputtering method. Different textures and interface roughnesses have been induced from magnetic (Fe, Co) and non-magnetic (Cu, Al, Ta, Cr) buffers. The MR is independent of the ML texture and grain size but presents a strong correlation with the interface as deduced from small and large angle XRD and AFM. In high roughness ML the evolution, under increasing applied field, of Δ R/ R versus ( M/ M s) 2 presents a strong deviation from a standard linear dependence. Such a deviation is attributed to the presence of Co granules in the Cu or/ and the buffer matrices when strong interface disorder is induced in the samples.