Analysis of Charge Deposition and Collection Caused by Low Energy Neutrons in a 25-nm Bulk CMOS Technology

• Published in: IEEE transactions on nuclear science Vol. 61; no. 6; pp. 3519 - 3526
• Main Authors: Abe, Shin-ichiro, Watanabe, Yukinobu
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CMOS technology; Monte Carlo methods; Monte Carlo simulation; MOSFET circuits; Neutrons; PHYSERD; Radiation effects; single event upset (SEU); Single event upsets; terrestrial radiation effects

Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the ela...