Analysis of Charge Deposition and Collection Caused by Low Energy Neutrons in a 25-nm Bulk CMOS Technology
Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the ela...
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Published in | IEEE transactions on nuclear science Vol. 61; no. 6; pp. 3519 - 3526 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.12.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2014.2367513 |