Analysis of Charge Deposition and Collection Caused by Low Energy Neutrons in a 25-nm Bulk CMOS Technology

Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the ela...

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Published inIEEE transactions on nuclear science Vol. 61; no. 6; pp. 3519 - 3526
Main Authors Abe, Shin-ichiro, Watanabe, Yukinobu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
CMOS technology
Monte Carlo methods
Monte Carlo simulation
MOSFET circuits
Neutrons
PHYSERD
Radiation effects
single event upset (SEU)
Single event upsets
terrestrial radiation effects
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Abstract Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.
AbstractList Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ([Formula Omitted]) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.
Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ( n, α) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.
Author Watanabe, Yukinobu
Abe, Shin-ichiro
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Snippet Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs...
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SubjectTerms CMOS technology
Monte Carlo methods
Monte Carlo simulation
MOSFET circuits
Neutrons
PHYSERD
Radiation effects
single event upset (SEU)
Single event upsets
terrestrial radiation effects
Title Analysis of Charge Deposition and Collection Caused by Low Energy Neutrons in a 25-nm Bulk CMOS Technology
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