High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C

• Published in: Advanced materials (Weinheim) Vol. 25; no. 31; pp. 4340 - 4346
• Main Authors: Lin, Yen-Hung, Faber, Hendrik, Zhao, Kui, Wang, Qingxiao, Amassian, Aram, McLachlan, Martyn, Anthopoulos, Thomas D.
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 21.08.2013; WILEY‐VCH Verlag
• Subjects: plastic electronics; solution processing; thin film transistors; transparent electronics; UV conversion; zinc oxide; thin film transistors; solution processing; transparent electronics; UV conversion; plastic electronics; zinc oxide
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.201301622

An aqueous and carbon‐free metal‐oxide precursor route is used in combination with a UV irradiation‐assisted low‐temperature conversion method to fabricate low‐voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180 °C. Because of its low temperature requirements...