High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C

An aqueous and carbon‐free metal‐oxide precursor route is used in combination with a UV irradiation‐assisted low‐temperature conversion method to fabricate low‐voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180 °C. Because of its low temperature requirements...

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Published inAdvanced materials (Weinheim) Vol. 25; no. 31; pp. 4340 - 4346
Main Authors Lin, Yen-Hung, Faber, Hendrik, Zhao, Kui, Wang, Qingxiao, Amassian, Aram, McLachlan, Martyn, Anthopoulos, Thomas D.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 21.08.2013
WILEY‐VCH Verlag
Subjects
plastic electronics
solution processing
thin film transistors
transparent electronics
UV conversion
zinc oxide
thin film transistors
solution processing
transparent electronics
UV conversion
plastic electronics
zinc oxide
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Summary:An aqueous and carbon‐free metal‐oxide precursor route is used in combination with a UV irradiation‐assisted low‐temperature conversion method to fabricate low‐voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high‐performance transistors onto temperature sensitive substrates such as plastic.
Bibliography:ark:/67375/WNG-RZB53TC0-7
istex:D65216A06748C35BC807A0E0364AC876E8B3334C
ArticleID:ADMA201301622
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201301622