Operation of a semiconductor opening switch at ultrahigh current densities

The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + - p-n-n + structure and a p-n junction depth from 145 t...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 46; no. 4; pp. 519 - 527
Main Authors Lyubutin, S. K., Rukin, S. N., Slovikovsky, B. G., Tsyranov, S. N.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.04.2012
Springer
Subjects
COMPUTERIZED SIMULATION
CURRENT DENSITY
DOPED MATERIALS
Electrons
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
P-N JUNCTIONS
Physics
Physics and Astronomy
Physics of Semiconductor Devices
SEMICONDUCTOR MATERIALS
SOLID-STATE PLASMA
Junction Depth
Diode Structure
Auger Recombination
Type Region
High Field Region
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Summary:The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + - p-n-n + structure and a p-n junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped p -region, in which the acceptor concentration exceeds 10 16 cm −3 , and the current cutoff process depends weakly on the p-n junction depth.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261204015X