Operation of a semiconductor opening switch at ultrahigh current densities
The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + - p-n-n + structure and a p-n junction depth from 145 t...
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 46; no. 4; pp. 519 - 527 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.04.2012
Springer |
Subjects | |
Online Access | Get full text |
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Summary: | The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm
2
is studied. In experiments, the maximum reverse current density reached 43 kA/cm
2
for ∼40 ns. Experimental data on SOS diodes with a
p
+
-
p-n-n
+
structure and a
p-n
junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped
p
-region, in which the acceptor concentration exceeds 10
16
cm
−3
, and the current cutoff process depends weakly on the
p-n
junction depth. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S106378261204015X |