The enhancement of electrical and optical properties of PEDOT:PSS using one-step dynamic etching for flexible application

[Display omitted] •We have introduced dynamic etching process.•Conductivity of PEDOT:PSS has improved by dynamic etching process.•Morphology and optical property have been progress.•The performance of the device with dynamic etching process was excellent. The conductivity enhancement of poly(3,4-eth...

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Published inOrganic electronics Vol. 15; no. 8; pp. 1849 - 1855
Main Authors Lim, Kyounga, Jung, Sunghoon, Lee, Seunghun, Heo, Jinhee, Park, Juyun, Kang, Jae-Wook, Kang, Yong-Cheol, Kim, Do-Geun
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.08.2014
Elsevier
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Summary:[Display omitted] •We have introduced dynamic etching process.•Conductivity of PEDOT:PSS has improved by dynamic etching process.•Morphology and optical property have been progress.•The performance of the device with dynamic etching process was excellent. The conductivity enhancement of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) by dynamic etching process was investigated to introduce the outstanding and simplest method for soft electronics. Four different samples which were pristine PEDOT:PSS, PEDOT:PSS doped with 5wt.% DMSO, PEDOT:PSS with dipping process, and PEDOT:PSS with dynamic etching process were prepared to compare the properties such as conductivity, morphology, relative atomic percentage, and topography. All samples were characterized by four point probe, current atomic force microscopy (C-AFM), X-ray photoelectron spectroscopy (XPS), and UV–visible spectroscopy. The conductivity of the sample with dynamic etching process showed the highest value as 1299S/cm among four samples. We proved that the dynamic etching process is superior to remove PSS phase from PEDOT:PSS film, to flow strong current through entire surface of PEDOT:PSS, and to show the smoothest surface (RMS 2.28nm). XPS analysis was conducted for accurate chemical and structural surface environments of four samples and the relative atomic percentage of PEDOT in the sample with dynamic etching was the highest as 29.5%. The device performance of the sample with the dynamic etching process was outstanding as 10.31mA/cm2 of Jsc, 0.75eV of Voc, 0.46 of FF, and 3.53% of PCE. All properties and the device performance for PEDOT:PSS film by dynamic etching process were the most excellent among the samples.
ISSN:1566-1199
1878-5530
DOI:10.1016/j.orgel.2014.04.014