Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs

The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the methods and current topics related to simulations of...

Full description

Saved in:
Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 11; p. 1
Main Authors Sugiura, Takaya, Matsuda, Kazunori, Nakano, Nobuhiko
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
CAD
Computational modeling
Computer aided design
First principles
Mathematical models
Nanowires
Photonic band gap
Piezoresistance
Piezoresistive devices
Piezoresistivity
Semiconductor piezoresistance
Silicon
Silicon carbide
Simulation
Online AccessGet full text

Cover

More Information
Summary:The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the methods and current topics related to simulations of piezoresistive devices. Advancing simulation modeling will facilitate the computer-aided design of piezoresistive devices, and this review introduces the means of establishing these models by discussing the current studies on simulations and calculations in this field. Two simulation methods currently exist namely, device simulations and first-principles theoretical analysis. This review focuses on numerical simulation approaches for modeling of the piezoresistive effect using the multiphysics simulations of the mechanical and electrical behaviors of piezoresistive materials.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2023.3281866