Properties of nanocrystalline copper prepared by vacuum-warm-compaction method

• Published in: Transactions of Nonferrous Metals Society of China Vol. 19; no. 2; pp. 394 - 398
• Main Author: 楚广 刘伟 杨天足 唐永建
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2009; School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China; Research Center of Laser Fusion of CAEP, Mianyang 621900, China%School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China%Research Center of Laser Fusion of CAEP, Mianyang 621900, China
• Subjects: electrical resistivity; microhardness; nanomaterials; vacuum-warm-compaction; 压实方法; 平均晶粒尺寸; 扫描电子显微镜; 显微硬度仪; 纳米铜; vacuum-warm-compaction; nanomaterials; microhardness; electrical resistivity
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(08)60284-8

Nanocrystalline Cu with average grain size of 22.8-25.3 nm was prepared by vacuum-warm-compaction method. Scanning electronic microscope, HMV-2 type microhardness tester, X-ray diffractometer, and 6157 type electrometer were used to determine the microstructure, microhardness and electrical resistivity of as-prepared nanocrystalline Cu, respectively. The results show that the microhardness of nanocrystalline Cu increases with larger pressure, longer duration of pressure or higher temperature. The highest microhardness of nanocrystalline Cu is 3.8 GPa, which is 7 times higher than that of coarse-grained copper. The electrical resistivity of as-prepared specimens is （1.2-1.4）× 10 ^-7 Ω·m at temperature 233-293 K, which is 5-6 times higher than that of the coarse-grained copper.