Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies
In this paper we focus on silicon nanowires (Si-NWs) which were fabricated on transparent conductive substrates by plasma-enhanced chemical vapor deposition (PECVD) method using Sn as stimulated catalyst metal. Transparent conductive substrates which we used are ZnO fabricated by direct current (dc)...
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Published in | Advances in natural sciences. Nanoscience and nanotechnology Vol. 5; no. 4; pp. 45011 - 8 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.12.2014
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper we focus on silicon nanowires (Si-NWs) which were fabricated on transparent conductive substrates by plasma-enhanced chemical vapor deposition (PECVD) method using Sn as stimulated catalyst metal. Transparent conductive substrates which we used are ZnO fabricated by direct current (dc) sputtering. Property of ZnO thin film was investigated by x-ray diffraction (XRD), volt-ohm-miliampere (VOM) meter, and Stylus method. In order to grow Si-NWs using PECVD we need to use metal as catalyst. We used Sn as catalyst to synthesize Si-NWs. Sn catalyst nanoparticles were fabricated by high vacuum evaporation system (SenVact). Size and density of Sn catalyst nanoparticles were investigated by scanning electron microscope (SEM). The influence of the thickness of metal layers on forming Sn catalyst nanoparticles was studied. In particular, the factors affecting the formation of Si-NWs such as temperature and rate of gas were examined. Si-NWs' properties were investigated by SEM, Raman spectroscopy and energy dispersive x-ray (EDX) spectrocopy. |
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Bibliography: | Vietnam Academy of Science and Technology ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2043-6262 2043-6254 2043-6254 2043-6262 |
DOI: | 10.1088/2043-6262/5/4/045011 |