Development of low cost, high performance Ba(Zn 1/3Nb 2/3O 3) based materials for microwave resonator applications

Solid solutions of the (x)Ba(Zn 1/3Nb 2/3)O 3 – (1-x)Ba(Co 1/3Nb 2/3)O 3 system were produced by the mixed oxide route. Sintering temperatures of 1300–1500 °C with cooling rates of 3–180 °C/h were used. Sintered densities of ⩽95% were achieved. A second phase deficient in Co and Zn was detected. Slo...

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Bibliographic Details
Published inJournal of the European Ceramic Society Vol. 23; no. 14; pp. 2467 - 2471
Main Authors Scott, R.I., Thomas, M., Hampson, C.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 2003
Elsevier
Subjects
Applied sciences
Ba(Zn,Nb)O 3
Circuit properties
Dielectric resonators
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Materials
Microwave ceramics
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Mobile telecommunications
Resonators
Microwave ceramics
Mobile telecommunications
Resonators
Dielectric resonators
Ba(Zn,Nb)O 3
Performance evaluation
Dielectric materials
Cooling rate
Material selection
Quaternary compound
Barium oxide
Niobium oxide
Manufacturing process
Development cost
Sintering
Zinc oxide
Microwave resonator
Ceramic materials
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Summary:Solid solutions of the (x)Ba(Zn 1/3Nb 2/3)O 3 – (1-x)Ba(Co 1/3Nb 2/3)O 3 system were produced by the mixed oxide route. Sintering temperatures of 1300–1500 °C with cooling rates of 3–180 °C/h were used. Sintered densities of ⩽95% were achieved. A second phase deficient in Co and Zn was detected. Slow cooling after sintering, down to 900 °C, induced B-site ordering which increased the dielectric Q values. Compositions near to 0.6[Ba(Zn 1/3Nb 2/3)O 3] – 0.4[Ba(Co 1/3Nb 2/3)O 3] exhibited zero temperature dependence of resonant frequency ( τ f ∼0). The presence of the second phase (Zn/Co deficient) improved the dielectric properties. Ceramics of optimum composition, having x∼0.6, have excellent electrical properties, ( Q value ∼43,000 at 2 GHz, relative permittivity ε r ∼35.5 and τ f tunable through zero). The material will offer a new design option for filter engineers in the development of 3G and other similar telecommunication systems.
ISSN:0955-2219
1873-619X
DOI:10.1016/S0955-2219(03)00134-1