Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and dist...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 62; no. 4; pp. 1177 - 1183
Main Authors Xi Lin, Xiao-Yong Liu, Chun-Min Zhang, Lei Liu, Jin-Shan Shi, Shuai Zhang, Wen-Bo Wang, Wei-Hai Bu, Jun Wu, Yi Gong, Peng-Fei Wang, Han-Ming Wu, Zhang, David-Wei
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2015
Subjects
Arrays
Current measurement
Device scalability
Integrated circuit modeling
macromodel
Scalability
semifloating-gate transistor (SFGT)
Simulation
SPICE
temperature dependency
Temperature measurement
semifloating-gate transistor (SFGT)
Device scalability
temperature dependency
macromodel
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Summary:A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85 °C. The device scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice model for circuit design is also developed. Finally, a memory array with the specific peripheral circuits is designed using the device model developed in this paper.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2398457