Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I–V analysis

• Published in: Surface science Vol. 504; no. 1-3; pp. 183 - 190
• Main Authors: Bonet, C., Spence, D.J., Tear, S.P.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 20.04.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Germanium; Lanthanides; Low energy electron diffraction (LEED); Metal–semiconductor interfaces; Physics; Silicides; Silicon; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Low energy electron diffraction (LEED); Germanium; Silicon; Silicides; Lanthanides; Metal–semiconductor interfaces; Dysprosium Silicides; Two dimensional structure; Dysprosium Germanides; Rare earths Compounds; Crystal faces; LEED; Experimental study; Surface structure
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(02)01065-8

Quantitative low energy electron diffraction (LEED) studies have been carried out to determine the structure of the rare-earth germanide Ge(1 1 1)1×1–Dy and the rare-earth silicide Si(1 1 1)1×1–Dy. The analyses reveal structures similar to that of other rare-earth silicides previously studied in which the dysprosium is located sub-surface below a reverse-buckled silicon/germanium bilayer. The LEED study has clearly demonstrated that the dysprosium atom is located above a substrate T4 site and refines earlier MEIS results.