Formation of carbon nanotubes from a silicon carbide/carbon composite

• Published in: Solid state sciences Vol. 11; no. 2; pp. 422 - 427
• Main Authors: Joshi, Ravi, Engstler, Jörg, Haridoss, Prathap, Schneider, Jörg J.
• Format: Journal Article
• Language: English
• Published: Issy-les-Moulineaux Elsevier Masson SAS 01.02.2009; Elsevier Masson
• Subjects: Carbon nanotubes; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanorods; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Plasma; Quantum wires; Silicon carbide; Carbon nanotubes; Plasma; Silicon carbide; Nanorods; Core shell structure; Mass loss; Aspect ratio; Carbon; Heat treatments; Thin films; Composite materials; Temperature effects; Silicon oxides; Graphite; Oxidation; Silicon; Thermal analysis; Surface layers; Nanorod; Nanostructured materials
• ISSN: 1293-2558; 1873-3085
• DOI: 10.1016/j.solidstatesciences.2008.07.012

The reaction of a SiC/C composite powder in an arcing plasma forms carbon nanotubes in good yield. Besides carbon nanotubes, a Si/C composite composed of β SiC covered with a shell of graphite is formed. The graphitic carbon surface layers of the carbon shell of this composite reacts further to form carbon nanotubes when heated to 600 °C. This process seems highly effective since only a small overall low weight loss, indicative for a complete carbon shell oxidation is observed by thermal analysis. The formation of the carbon nanotubes from SiC is unlikely since no SiO 2 has been found when heating the SiC/C core shell composite to its reaction temperature of 600 °C under O 2. The CNTs formed are of good quality with 3 to 6 concentric walls and high aspect ratio. Occasionally even single walled carbon naotubes have been observed. [Display omitted] Carbon nanotubes have been synthesized by heating a crystalline SiC/C composite which is prepared from elemental silicon and carbon via a plasma arc process. The carbon phases which are mainly located on the surface of SiC are converted to single and multiwalled CNTs.