On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

In this work, a unified numerical model is used to determine the melting thresholds and to investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition ov...

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Bibliographic Details
Published inApplied sciences Vol. 13; no. 6; p. 3818
Main Authors Beránek, Jiří, Bulgakov, Alexander V., Bulgakova, Nadezhda M.
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.03.2023
Subjects
Approximation
Comparative analysis
Gallium arsenide
Germanium
Heat
Irradiation
laser processing
Lasers
Mathematical models
melting
Melting points
nanosecond
Nanosecond pulses
Numerical models
Optical properties
Pulse duration
pulsed laser
Semiconductors
Simulation
Temperature
Temperature dependence
thermal model
Thermophysical properties
Thresholds
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Summary:In this work, a unified numerical model is used to determine the melting thresholds and to investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established that enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).
ISSN:2076-3417
2076-3417
DOI:10.3390/app13063818