The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

In this study, monocrystalline silicon was ablated by a single 1030 nm femtosecond laser pulse. Variable laser fluence (0.16–3.06 J/cm2) was used, and two ablation thresholds (0.8 and 1.67 J/cm2) were determined experimentally. A two-temperature model was established based on the dynamic optical mod...

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Bibliographic Details
Published inJournal of Manufacturing and Materials Processing Vol. 7; no. 2; p. 68
Main Authors Liu, Yi-Hsien, Cheng, Chung-Wei
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.04.2023
Subjects
Ablation
ablation threshold
Boiling points
Carrier density
Dielectrics
Efficiency
Explosions
femtosecond laser
Femtosecond pulsed lasers
Femtosecond pulses
Fluence
Heat
Lasers
Latent heat
melting threshold
Optical properties
phase explosion
Phase transitions
Scanning electron microscopy
Silicon
Thresholds
Vaporization
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Summary:In this study, monocrystalline silicon was ablated by a single 1030 nm femtosecond laser pulse. Variable laser fluence (0.16–3.06 J/cm2) was used, and two ablation thresholds (0.8 and 1.67 J/cm2) were determined experimentally. A two-temperature model was established based on the dynamic optical model, the carrier density model, and the phase explosion model for comparison with experimental results. The melting (0.25 J/cm2) and vaporization (0.80 J/cm2) thresholds were determined when the lattice temperature reached melting and boiling points, so as to overcome the latent heat. Finally, the ablation depth was calculated using the phase explosion model, and the ablation threshold was 1.5 J/cm2. The comparisons show that the proposed model can predict the ablation depth obtained by a single femtosecond laser pulse.
ISSN:2504-4494
2504-4494
DOI:10.3390/jmmp7020068