Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors

• Published in: Solid-state electronics Vol. 85; pp. 59 - 63
• Main Authors: Cerdeira, A., Estrada, M., Iniguez, B., Trevisoli, R.D., Doria, R.T., de Souza, M., Pavanello, M.A.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.07.2013; Elsevier
• Subjects: Accumulation JLT; Applied sciences; Computer simulation; Depletion; Depletion JLT; Doping; Double-Gate Junctionless Transistor model; Electronics; Exact sciences and technology; Extraction; Inclusions; JLT; Junctionless transistor; Mathematical models; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Double-Gate Junctionless Transistor model; Depletion JLT; JLT; Accumulation JLT; Junctionless transistor; Long channel; Concentration effect; Dual gate transistor; Series resistance
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2013.03.008

•Continuous model for Symmetric Double-Gate Junctionless Transistors is proposed.•The model is physically-based for depletion and accumulation operating conditions.•The model provides an accurate description of the transistor behavior.•An analytical expression to calculate the threshold voltage was obtained.•The effect of the series resistance is included. A new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5×1018 and 1×1019cm−3, as well as for layer thicknesses of 10, 15 and 20nm. The model is physically-based, considering both the depletion and accumulation operating conditions. Most model parameters are related to physical magnitudes, and the extraction procedure for each of them is well established. The model provides an accurate description of the transistor behavior in all operating conditions. Among important advantages with respect to previous models are the inclusion of the effect of the series resistance and the fulfilment of the requirement of being symmetrical with respect to Vd=0V.