Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal

Indium doped cesium iodide (CsI:In) single crystals were grown by the Bridgman method. A comparison study of the scintillation properties of our CsI:In and commercially available CsI:Tl single crystals was carried out, including scintillation decay time, energy resolution, non-proportionality, absol...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 62; no. 2; pp. 571 - 576
Main Authors Yuntao Wu, Guohao Ren, Fang Meng, Xiaofeng Chen, Dongzhou Ding, Huanyin Li, Shangke Pan, Melcher, Charles L.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2015
Subjects
Afterglow
Crystals
CsI:In
Energy measurement
Energy resolution
Ions
Luminescence
non-proportionality
Photonics
Temperature measurement
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Summary:Indium doped cesium iodide (CsI:In) single crystals were grown by the Bridgman method. A comparison study of the scintillation properties of our CsI:In and commercially available CsI:Tl single crystals was carried out, including scintillation decay time, energy resolution, non-proportionality, absolute light yield, and afterglow. Under X-ray excitation, the CsI:In emission corresponds to a symmetrical broad band centered at 545 nm. Its scintillation decay time is 1.99 ±0.02 μs at room temperature under 137 Csγ-ray excitation. The CsI:In light yield was found to be 34,700 ±1735 photons per MeV with an energy resolution of 9.1 ±0.3%, based on the pulse height spectra under 137 Cs excitation. The afterglow level of CsI:In over 130 ms after pulsed X-ray excitation was two orders of magnitude higher than that of CsI:Tl.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2412523