Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's

• Published in: IEEE transactions on electron devices Vol. 40; no. 6; pp. 1047 - 1052
• Main Authors: Adams, J.A., Thayne, I.G., Wilkinson, C.D.W., Beaumont, S.P., Johnson, N.P., Kean, A.K., Stanley, C.R.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.1993; Institute of Electrical and Electronics Engineers
• Subjects: Analytical models; Application specific integrated circuits; Applied sciences; Buffer layers; Electronics; Exact sciences and technology; Gallium arsenide; Integrated circuit yield; MESFET integrated circuits; Nanoelectronics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Subthreshold current; Transconductance; Transistors; Voltage; Gallium Arsenides; Field effect transistor; Decrease; Short channel; Barrier height; Metal semiconductor field effect transistor; Nanotechnology; Electrical characteristic
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.214727

Short-channel effects in GaAs MESFETs are investigated. MESFETs were fabricated with gate lengths in the range of 40 to 300 nm with GaAs and AlGaAs buffer layers. The MESFETs were characterized by DC transconductance, output conductance, and subthreshold measurements. This work focuses on overcoming the short-channel effect of large output conductance by the inclusion of an AlGaAs buffer layer, and identifying the benefit the AlGaAs buffer affords for reducing subthreshold current, including the effect of drain-induced barrier lowering. The design yielded 300-nm gate-length MESFETs with excellent suppression of the major short-channel effects.< >