Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

• Published in: Journal of crystal growth Vol. 248; pp. 119 - 123
• Main Authors: Longo, M., Magnanini, R., Parisini, A., Tarricone, L., Carbognani, A., Bocchi, C., Gombia, E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2003; Elsevier
• Subjects: A1. Carbon doping; A3. Metalorganic vapor phase epitaxy; B1. GaAs; B1. Tertiary butylarsine; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; 61.72.V; B1. Tertiary butylarsine; A1. Carbon doping; A3. Metalorganic vapor phase epitaxy; 81.15.G; B1. GaAs; Gallium arsenides; Inorganic compounds; Doping; Operating mode; VPE; Crystal growth from vapors; Precursor; Characterization; Thin films; Optical properties; Organic arsine; 61.72.V A1. Carbon doping; Electrical properties; Process control; Gallium Organic compounds; Experimental study; Carbon additions; MOVPE method; Low pressure; Homojunctions; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01846-8

Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy (MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low-toxicity, low-dissociation-temperature tertiary-butyl-arsine (TBAs), in order to exploit the phenomenon of controlled intrinsic carbon doping. Low-temperature photoluminescence, Hall effect and capacitance-voltage measurements were performed on the grown samples. The intrinsic carbon doping was studied as a function of: (i) the growth temperature (ranging between 500°C and 640°C), (ii) the V/III precursor ratio in the vapour phase (ranging between 1 and 25) and (iii) the influence of GaAs substrate mis-orientation (0° and 2°off toward 110). Although a reduced carbon incorporation rate was expected by using TBAs, which is a benefit in obtaining high purity GaAs, intrinsically p-doped GaAs layers with a hole concentrations up to 6.5×10 18 cm −3 and a corresponding RT mobility in the range (100–400) cm 2/V s were obtained.