Computational modeling of SiC epitaxial growth in a hot wall reactor

• Published in: Journal of crystal growth Vol. 220; no. 4; pp. 560 - 571
• Main Authors: Ji, W., Lofgren, P.M., Hallin, C., Gu, C.-Y., Zhou, G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2000; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; CVD; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; SiC; TECHNOLOGY; TEKNIKVETENSKAP; Theory and models of film growth; CVD; 81.10.Aj; Model; 81.15.Gh; SiC; Inorganic compounds; Semiconductor materials; Films; Epitaxy; Theoretical study; Silicon carbides; Advection diffusion equation; Crystal growth from vapors; Precursor; Gas mixtures; Hot wall growth; Limiting factor; Chemical composition; Models; Kinetics
• ISSN: 0022-0248; 1873-5002; 1873-5002
• DOI: 10.1016/S0022-0248(00)00843-5

A computational model for chemical vapor deposition (CVD) of silicon carbide (SiC) in a hot-wall reactor is developed, where the susceptor is tapered with a rectangular cross-section. The present work focuses on the advection–diffusion-reaction process in the susceptor. The precursors are propane and silane, and the carrier gas is hydrogen with mass fraction higher than 99%. Computed growth rates under different system pressures and precursor concentrations are compared to the experimental data measured on samples grown in the Linköping CVD reactor. The gas composition distribution in the susceptor and the growth rate profile on the susceptor floor are shown and analyzed. Dependence of the growth rate on precursor concentrations is investigated. It is demonstrated that the growth rate of SiC may either be carbon transport limited or silicon controlled, depending on the input carbon-to-silicon ratio.