High-temperature operation of polycrystalline diamond field-effect transistors

• Published in: IEEE electron device letters Vol. 14; no. 2; pp. 66 - 68
• Main Authors: Tessmer, A.J., Plano, L.S., Dreifus, D.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.1993; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Chemical vapor deposition; Electronics; Exact sciences and technology; FETs; Microwave devices; Microwave theory and techniques; Plasma chemistry; Plasma devices; Plasma properties; Plasma temperature; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transconductance; Transistors; Voltage; Field effect transistor; Microelectronic fabrication; Temperature; Voltage current curve; Polycrystal; Theoretical study; Leakage current; Performance; Chemical vapor deposition; Transconductance
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.215110

Operation of polycrystalline diamond field-effect transistors (FETs) at temperatures up to 285 degrees C and drain-to-source voltages of up to 100 V has been demonstrated. The devices were fabricated from B-doped polycrystalline diamond grown by a microwave plasma-enhanced chemical vapor deposition (CVD) technique. At 150 degrees C, the devices exhibited saturation of drain current and a peak transconductance of 65 nS/mm. These are the first polycrystalline diamond devices to demonstrate saturation. Device characteristics at 250 degrees C also show saturation and increased transconductance of 300 nS/mm. Characterization was not performed at temperatures exceeding 285 degrees C due to gate leakage current above 10 nA.< >