The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

• Published in: Surface science Vol. 500; no. 1-3; pp. 859 - 878
• Main Authors: Weldon, Marcus K, Queeney, K.T, Eng Jr, Joseph, Raghavachari, Krishnan, Chabal, Yves J
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 10.03.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Ab initio quantum chemical methods and calculations; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Low index single crystal surfaces; Metal-insulator-semiconductor structures (including semiconductor-to-insulator); Oxidation; Physics; Silicon; Silicon oxides; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vibrations of adsorbed molecules; Ab initio quantum chemical methods and calculations; Silicon; Oxidation; Vibrations of adsorbed molecules; Silicon oxides; Low index single crystal surfaces; Molecular dynamics; Electronics; MOSFET; Reviews; Solid-solid interfaces; Oxidative degradation
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(01)01585-0

Due to the extreme dimensional scaling required by Moore's law, Si device technology is increasingly subject to the limitations imposed by the intrinsic physics and chemistry of surfaces and interfaces. In this review we outline ways in which fundamental surface science has contributed an understanding to the microelectronics community and discuss areas where surface science may impact future development. We focus on the example of silicon dioxide (SiO2) on silicon, since this interface lies at the heart of modern transistor technology and has therefore received a great deal of attention in recent years. We highlight a number of experimental and theoretical approaches that have elucidated the fundamental phenomena associated with the formation and evolution of this critical technological interface, revealing the remarkable interdependence of science and technology that now characterizes this rapidly evolving industry.