Structure and electronic properties of SiC thin-films deposited by RF magnetron sputtering

• Published in: Transactions of Nonferrous Metals Society of China Vol. 17; no. 2; pp. 373 - 377
• Main Author: 周继承 郑旭强
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2007; School of Physics Science and Technology, Central South University, Changsha 410083, China
• Subjects: amorphous SiC thin-films; electron excitation energy; resistivity; RF-磁控管溅射法; SiC薄膜; surface morphology; 电学性质; surface morphology; amorphous SiC thin-films; electron excitation energy; resistivity
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(07)60101-0

SiC thin-films were prepared by RF-magnetron sputtering technique（RMS） with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance--temperature were measured. The results show that the curves of liaR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where △W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250℃. The resistivity is in the range of 2.4 × 10^-3 - 4.4 × 10^-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.