Weakly dispersive band near the fermi level of GaMnAs due to Mn interstitials

The nature of the weakly dispersive electronic band near the Fermi level observed in photoemission experiments on the diluted magnetic semiconductor GaMnAs is investigated theoretically. The combination of experimental features appears puzzling. We show that the formation of the band is closely rela...

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Bibliographic Details
Published inPhysical review letters Vol. 95; no. 23; p. 237207
Main Authors Ernst, A, Sandratskii, L M, Bouhassoune, M, Henk, J, Lüders, M
Format Journal Article
LanguageEnglish
Published United States 02.12.2005
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Summary:The nature of the weakly dispersive electronic band near the Fermi level observed in photoemission experiments on the diluted magnetic semiconductor GaMnAs is investigated theoretically. The combination of experimental features appears puzzling. We show that the formation of the band is closely related to the presence of the Mn interstitial impurities. The states forming the band have predominantly minority-spin Mn-3d character. The low experimental Mn-3d intensity is explained by the low content of the interstitial Mn impurities. The features of the band are robust with respect to the calculational technique [local density approximation (LDA), LDA + U].
ISSN:0031-9007
DOI:10.1103/physrevlett.95.237207