Ta/Si Schottky diodes fabricated by magnetron sputtering technique

• Published in: Microelectronic engineering Vol. 87; no. 11; pp. 2338 - 2342
• Main Authors: Ocak, Y.S., Genisel, M.F., Kılıçoğlu, T.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.2010; Elsevier
• Subjects: Applied sciences; Barrier height; Barriers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Diodes; Electrical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Interfaces; Magnetron sputtering; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Series resistance; Silicon; Sputtering; Surface double layers, schottky barriers, and work functions; Tantalum; Volt-ampere characteristics; Schottky diodes; Tantalum; Barrier height; Series resistance; Sputtering; Interface state; Voltage current curve; Electrical properties; Oxide layer; Tantalum nitride; Heterogeneity; Ideality; Energy gap; Microelectronic fabrication; p type semiconductor; n type semiconductor; Silicon; Cathodic sputtering; Schottky barrier diode; Sputter deposition; Interface; Schottky barrier; Voltage capacity curve; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2010.04.003

Electrical properties of Ta/ n-Si and Ta/ p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage ( I– V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance–voltage ( C– V) measurements have been compared the ones obtained from I– V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C– V and R s – V measurements.