Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Two‐dimensional (2D) materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel properties. This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives, Ge‐IVA bina...

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Bibliographic Details
Published inInfoMat Vol. 4; no. 11
Main Authors Zhao, Fulai, Feng, Yiyu, Feng, Wei
Format Journal Article
LanguageEnglish
Published Melbourne John Wiley & Sons, Inc 01.11.2022
Wiley
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Summary:Two‐dimensional (2D) materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel properties. This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives, Ge‐IVA binary compounds, Ge‐VA binary compounds, and Ge‐VIA binary compounds. The latest progress in predictive modeling, fabrication, and fundamental and physical property modulation of their stable 2D configurations are presented. Accordingly, various interesting applications of these Ge‐based 2D materials are discussed, particularly field effect transistors, photodetectors, optical devices, catalysts, energy storage devices, solar cells, thermoelectric devices, sensors, biomedical materials, and spintronic devices. Finally, this review concludes with a few perspectives and an outlook for quickly expanding the application scope Ge‐based 2D materials based on recent developments. This review summarizes the theoretical and experimental progress of Ge‐based monoelemental and binary two‐dimensional (2D) materials, with an emphasis on their crystal structures and electronic, mechanical, thermal, optical, and photoelectric properties. The application prospects of these materials in field effect transistors, photodetectors, optical devices, catalysts, energy storage devices, solar cells, thermoelectric devices, sensors, biomedical materials, and spintronic devices are discussed in detail.
Bibliography:Funding information
National Natural Science Foundation of China, Grant/Award Numbers: 52103093, 52130303, 52173078; China Postdoctoral Science Foundation, Grant/Award Numbers: 2021M702424, 2022T150172; the Young Elite Scientists Sponsorship Program by CAST, Grant/Award Number: 2021QNRC001; the Seed Foundation of Tianjin University, Grant/Award Number: 220636
ISSN:2567-3165
2567-3165
DOI:10.1002/inf2.12365