Novel failure mechanism of nanoscale mesa‐type avalanche photodiodes under harsh environmental stresses

Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest in the applications of passive optical network, wireless,...

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Bibliographic Details
Published inIET Nanodielectrics Vol. 4; no. 1; pp. 21 - 26
Main Authors Huang, Jack Jia‐Sheng, Chang, HsiangSzu, Chou, Emin, Jan, Yu‐Heng, Shi, Jin‐Wei
Format Journal Article
LanguageEnglish
Published Beijing John Wiley & Sons, Inc 01.03.2021
Wiley
Subjects
Avalanche diodes
avalanche photodiodes
Degradation
Electric fields
Electrochemical oxidation
failure analysis
Failure mechanisms
Free space optics
Humidity
Low noise
Military applications
Morphology
Network reliability
optical links
photodetectors
Photodiodes
Scanning electron microscopy
Stresses
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Summary:Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest in the applications of passive optical network, wireless, military, and free space optics. The authors study the APD degradation under the harsh environment of high humidity and high bias. The failure morphology through cross‐sectional scanning electron microscopy is shown, and a new moisture degradation model based on electrochemical oxidation to account for the failure mechanism is developed.
ISSN:2514-3255
2514-3255
DOI:10.1049/nde2.12001