Second order sigma-delta control of charge trapping for MOS capacitors

This paper presents the circuit topology of a second order sigma-delta control of charge trapping for MOS capacitors. With this new topology it is possible to avoid the presence of plateaus that can be found in first-order sigma-delta modulators. Plateaus are unwanted phenomena in which the control...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 76-77; pp. 635 - 639
Main Authors Bheesayagari, C., Gorreta, S., Pons-Nin, J., Domínguez-Pumar, M.
Format Journal Article Publication
LanguageEnglish
Published Elsevier Ltd 01.09.2017
Subjects
Charge trapping
Dielectric charging
Dielectric devices
Dispositius dielèctrics
Enginyeria de la telecomunicació
Enginyeria electrònica
MOS
Processament del senyal
Sigma-delta
Sliding mode control
Àrees temàtiques de la UPC
MOS
Sigma-delta
Charge trapping
Dielectric charging
Sliding mode control
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Summary:This paper presents the circuit topology of a second order sigma-delta control of charge trapping for MOS capacitors. With this new topology it is possible to avoid the presence of plateaus that can be found in first-order sigma-delta modulators. Plateaus are unwanted phenomena in which the control is locked for a certain time interval (of unknown duration). In this case the control output is constant and therefore the controlled device is in fact in open-loop configuration. It is shown that the presence of plateaus is avoided in MOS capacitors using the proposed approach. •New method of charge trapping control for MOS capacitors•Method based in second-order sigma-delta modulation•This method improves previous first-order solutions: Control plateaus are avoided and quantization noise shaping is improved.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2017.06.096