Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

• Published in: IEEE journal of the Electron Devices Society Vol. 9; pp. 492 - 499
• Main Authors: Ribeiro, Thales Augusto, Barraud, Sylvain, Pavanello, Marcelo Antonio
• Format: Journal Article
• Language: English
• Published: New York IEEE 2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Carrier mobility; Doping; high temperature; junctionless; Junctionless nanowire transistors; Logic gates; Nanowires; Parameter identification; Scattering; Semiconductor devices; SOI; subthreshold slope; Temperature distribution; Threshold voltage; Transistors
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2021.3051500

This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices.